rev.2.00 sep 07, 2005 page 1 of 6 HAT2077R silicon n channel mos fet high speed power switching rej03g1179-0200 (previous: ade-208-1228) rev.2.00 sep 07, 2005 features ? low on-resistance ? low drive current ? high density mounting outline renesas package code: prsp0008dd-d (package name: sop-8 < fp-8dav> ) 1, 2, 3 source 4 gate 5, 6, 7, 8 drain g d sss ddd 4 123 567 8 1 2 3 4 5 6 7 8
HAT2077R rev.2.00 sep 07, 2005 page 2 of 6 absolute maximum ratings (ta = 25 c) item symbol value unit drain to source voltage v dss 200 v gate to source voltage v gss 30 v drain current i d 3 a drain peak current i d (pulse) note 1 24 a body-drain diode reverse drain current i dr 3 a channel dissipation pch note 2 2.5 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board (fr4 40 40 1.6 mm), pw 10 s electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br) dss 200 ? ? v i d = 10 ma, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = 30 v, v ds = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 200 v, v gs = 0 gate to source cutoff voltage v gs (off) 3.0 ? 4.5 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds (on) ? 0.18 0.235 ? i d = 1.5 a, v gs = 10 v note 3 forward transfer admittance |y fs | 2.3 3.8 ? s i d = 1.5 a, v ds = 10 v note 3 input capacitance ciss ? 830 ? pf output capacitance coss ? 115 ? pf reverse transfer capacitance crss ? 23 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time t d (on) ? 23 ? ns rise time t r ? 10 ? ns turn-off delay time t d (off) ? 70 ? ns fall time t f ? 10 ? ns v dd ? 100 v, i d = 1.5 a v gs = 10 v r l = 66.7 ? rg = 10 ? total gate charge qg ? 23 ? nc gate to source charge qgs ? 3.5 ? nc gate to drain charge qgd ? 10 ? nc v dd = 160 v v gs = 10 v i d = 3 a body-drain diode forward voltage v df ? 0.75 1.15 v i f = 3 a, v gs = 0 note 3 body-drain diode reverse recovery time t rr ? 75 ? ns i f = 3 a, v gs = 0 di f /dt = 100 a/ s note: 3. pulse test
HAT2077R rev.2.00 sep 07, 2005 page 3 of 6 main characteristics channel dissipation pch (w) ambient temperature ta (c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics note 4: when using the glass epoxy board (fr4 40 40 1.6 mm) 4 0 1 2 3 0 50 100 150 200 100 10 1 0.1 0.01 0.001 0.1 0.3 1 3 10 30 1000 100 300 20 0 4 8 12 16 048121620 v gs = 4.5 v 20 0 4 8 12 16 02468 10 25c pulse test v ds = 10 v pulse test test condition: when using the glass epoxy board (fr4 40 40 1.6 mm), pw 10 s gate to source voltage v gs (v) drain to source voltage v ds (on) (v) drain to source saturation voltage vs. gate to source voltage drain current i d (a) drain to source on state resistance r ds (on) ( ? ) static drain to source on state resistance vs. drain current 1.0 0 0.2 0.4 0.6 0.8 048121620 2 a 1 a i d = 3 a 0.1 0.2 0.5 10 20 12 5 50 0.5 0.2 0.1 0.02 0.05 0.01 v gs = 10 v, 15 v pulse test pulse test 5.5 v 8 v 5 v 6 v ?25c operation in this area is limited by r ds (on) ta = 25c 1 shot pulse dc operation (pw 10 s) pw = 10 ms (1 shot) n ote 4 1 ms 100 s 10 v tc = 75c 10 s
HAT2077R rev.2.00 sep 07, 2005 page 4 of 6 case temperature tc (c) static drain to source on state resistance r ds (on) ( ? ) static drain to source on state resistance vs. temperature forward transfer admittance |y fs | (s) drain current i d (a) forward transfer admittance vs. drain current 0.5 0.4 0.1 0.2 0.3 ?40 0 40 80 120 160 0 0.1 0.2 0.5 1 2 5 10 20 50 50 10 20 1 2 5 0.5 0.1 0.2 25c tc = ?25c 75c pulse test v ds = 10 v pulse test reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 0.1 0.3 1 3 10 30 100 1000 20 100 50 200 500 10 020406080100 5000 2000 1000 200 500 100 20 50 5 10 500 0 100 200 300 400 0 20 8 16243240 0 4 8 12 16 v gs v ds i d = 3 a 500 200 50 2 10 100 20 5 1 0.2 0.5 1 2 5 50 20 10 0.1 drain current i d (a) switching time t (ns) switching characteristics v dd = 160 v 100 v 50 v t f t r t d(off) t d(on) i d = 3 a 2 a 1 a v gs = 10 v di / dt = 100 a / s v gs = 0, ta = 25c v dd = 160 v 100 v 50 v ciss coss crss v gs = 0 f = 1 mhz v gs = 10 v, v dd = 100 v pw = 5 s, duty 1 % rg = 10 ?
HAT2077R rev.2.00 sep 07, 2005 page 5 of 6 t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time waveform switching time test circuit 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) p dm pw t d = pw t ch ? f (t) = s (t) ch ? f ch ? f = 83.3c/w, ta = 25c when using the glass epoxy board (fr4 40 40 1.6 mm) source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage 5 ?40 0 40 80 120 160 0 1 2 3 4 case temperature tc (c) gate to source cutoff voltage v gs(off) (v) gate to source cutoff voltage vs. case temperature 20 0 4 8 12 16 0 0.40.81.21.62.0 pulse test 5 v 10 v v gs = 0 v v ds = 10 v 1 ma 0.1 ma i d = 10 ma vin monitor d.u.t. vin 10 v r l vout monitor 10 ? v ds = 100 v
HAT2077R rev.2.00 sep 07, 2005 page 6 of 6 package dimensions p-sop8-3.95 4.9-1.27 0.085g mass[typ.] fp-8dav prsp0008dd-d renesas code jeita package code package name a 8 5 1 4 f b p c detail f terminal cross section 1.27 1.08 0.40 l 1 0.60 0.25 x 0.46 0.40 0.34 0.10 b p b 1 c 1 0.25 0.20 0.15 max nom min dimension in millimeters symbol reference 5.3 4.90 d 3.95 e 0.14 a 2 6.20 6.10 5.80 0.25 1.75 a 0.75 z l 8 0 c 1.27 e 0.1 y h e a 1 d * 1 * 2 e h e * 3 x m b p e z (ni/pd/au plating) 2. 1. dimensions " * 1(nom)" and " * 2" do not include mold flash. note) dimension " * 3" does not include trim offset. index mark a 1 l 1 l detail f y ordering information part name quantity shipping container HAT2077R-el-e 2500 pcs taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme nt of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o r errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas techn ology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci rcumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materi als. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lic ense from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas technology korea co., ltd. kukje center bldg. 18th fl., 191, 2-ka, hangang-ro, yongsan-ku, seoul 140-702, korea tel: <82> 2-796-3115, fax: <82> 2-796-2145 renesas technology malaysia sdn. bhd. unit 906, block b, menara amcorp, amcorp trade centre, no.18, jalan persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: <603> 7955-9390, fax: <603> 7955-9510 renesas sales offices ? 200 5. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .3.0
|
